I le aso 13 o Setema, 2024, na faalauiloa ai e Resonac le fausiaina o se fale gaosiga fou mo SiC (silicon carbide) wafers mo eletise eletise i lona Yamagata Plant i Higashine City, Yamagata Prefecture. O le faʻamaeʻaina o loʻo faʻamoemoe i le kuata lona tolu o le 2025.
O le fale fou o le a tu i totonu o le Yamagata Plant o lona lala, Resonac Hard Disk, ma o le a iai lona fau fale e 5,832 sikuea mita. O le a maua mai ai SiC wafers (substrates ma epitaxy). Ia Iuni 2023, na maua ai e Resonac le tusipasi mai le Matagaluega o le Tamaoaiga, Fefaʻatauaʻiga ma Alamanuia o se vaega o le faʻamautinoaga o le sapalai o mea taua ua faʻatulagaina i lalo o le Tulafono o le Faʻaleleia o le Puipuiga o le Tamaoaiga, faʻapitoa mo mea semiconductor (SiC wafers). O le fuafuaga faʻamautinoaga o sapalai ua faʻamaonia e le Matagaluega o le Tamaoaiga, Fefaʻatauaʻiga ma Alamanuia e manaʻomia ai se tupe teufaafaigaluega o le 30.9 piliona yen e faʻamalosia ai le gaosiga o le gaosiga o le SiC i nofoaga autu i Oyama City, Tochigi Prefecture; Hikone City, Shiga Prefecture; Higashine City, Yamagata Prefecture; ma Ichihara City, Chiba Prefecture, faʻatasi ai ma fesoasoani e oʻo atu i le 10.3 piliona yen.
O le fuafuaga o le amata tuʻuina atu o SiC wafers (substrates) i Oyama City, Hikone City, ma Higashine City ia Aperila 2027, faʻatasi ai ma le gaosiga faʻaletausaga o le 117,000 fasi pepa (e tutusa ma le 6 inisi). O le tu'uina atu o SiC epitaxial wafers i Ichihara City ma Higashine City ua fa'atulaga e amata ia Me 2027, fa'atasi ai ma le fa'amoemoega fa'aletausaga e 288,000 fasi pepa (e le suia).
I le aso 12 o Setema, 2024, na faia ai e le kamupani se sauniga o le suatiaina o le eleele i le nofoaga fuafuaina o le fausiaina i le Yamagata Plant.
Taimi meli: Sep-16-2024